• DocumentCode
    1777309
  • Title

    Ambipolar phosphorene field-effect transistors with dielectric capping

  • Author

    Han Liu ; Neal, A.T. ; Ye, Peide D.

  • Author_Institution
    Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA
  • fYear
    2014
  • fDate
    22-25 June 2014
  • Firstpage
    201
  • Lastpage
    202
  • Abstract
    We fabricated field-effect transistors based on few-layer phosphorene. We show a well-behaved back-gate few-layer phosphorene transistor with an on-current of 144 mA/mm, on/off ratio over 104 and hole field-effect mobility of 95.6 cm2/V·s. An ALD Al2O3 top dielectric capping could tune the effective Schottky barrier heights for electrons/holes, and hence change the polarity of the transistor from p-type to ambipolar.
  • Keywords
    Schottky barriers; aluminium compounds; field effect transistors; hole mobility; Al2O3; ambipolar phosphorene field-effect transistors; dielectric capping; effective Schottky barrier height; hole field-effect mobility; on-off ratio; top dielectric capping; transistor polarity; well-behaved back-gate few-layer phosphorene transistor; Aluminum oxide; Charge carrier processes; Dielectrics; Logic gates; Schottky barriers; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference (DRC), 2014 72nd Annual
  • Conference_Location
    Santa Barbara, CA
  • Print_ISBN
    978-1-4799-5405-6
  • Type

    conf

  • DOI
    10.1109/DRC.2014.6872367
  • Filename
    6872367
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1777309