Title :
Ambipolar phosphorene field-effect transistors with dielectric capping
Author :
Han Liu ; Neal, A.T. ; Ye, Peide D.
Author_Institution :
Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA
Abstract :
We fabricated field-effect transistors based on few-layer phosphorene. We show a well-behaved back-gate few-layer phosphorene transistor with an on-current of 144 mA/mm, on/off ratio over 104 and hole field-effect mobility of 95.6 cm2/V·s. An ALD Al2O3 top dielectric capping could tune the effective Schottky barrier heights for electrons/holes, and hence change the polarity of the transistor from p-type to ambipolar.
Keywords :
Schottky barriers; aluminium compounds; field effect transistors; hole mobility; Al2O3; ambipolar phosphorene field-effect transistors; dielectric capping; effective Schottky barrier height; hole field-effect mobility; on-off ratio; top dielectric capping; transistor polarity; well-behaved back-gate few-layer phosphorene transistor; Aluminum oxide; Charge carrier processes; Dielectrics; Logic gates; Schottky barriers; Transistors;
Conference_Titel :
Device Research Conference (DRC), 2014 72nd Annual
Conference_Location :
Santa Barbara, CA
Print_ISBN :
978-1-4799-5405-6
DOI :
10.1109/DRC.2014.6872367
