Growth process for high performance of InGaAs MOSFETs

To obtain high performance in nMOSFETs, the introduction of high-mobility channel material such as InGaAs is a promising approach. However, the required source doping concentration for a high driving current cannot be obtained by ion implantation in InGaAs. One method of achieving a heavily doped source in III-V semiconductor MOSFETs is by growing an epitaxial source/drain structure.¹ For realizing such a source, we used a regrown InGaAs source^2,3 and an InP source.⁴ The regrown sources are also important for high current drivability of 3D or multi-gate devices. The other advantage of regrowth in multi-gate devices is a smooth surface for high electron mobility.⁵ In this report, we describe the growth process for high-performance InGaAs MOSFETs.