Title :
Common emitter operation of III-N HETs using AlGaN and InGaN polarization-dipole induced barriers
Author :
Gupta, Gaurav ; Laurent, Monique ; Haoran Li ; Suntrup, Donald J. ; Acuna, Edwin ; Keller, S. ; Mishra, Umesh
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of California Santa Barbara, Santa Barbara, CA, USA
Abstract :
In conclusion, we show that injection energy and base thickness are the critical parameters for achieving gain in III-N HETs. It is important to make sure that high leakage currents and large base resistance do not result in inaccurate extraction of gain and transfer ratio. A better understanding of the design space is required to achieve CE current gain and move towards our goal of building a high-frequency III-N HET.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; hot electron transistors; wide band gap semiconductors; CE current gain; base resistance; base thickness; common emitter operation; design space; gain-transfer ratio; high-frequency III-N HET; injection energy; leakage current; polarization-dipole induced barriers; Aluminum gallium nitride; Ballistic transport; Educational institutions; Leakage currents; Modulation; Resistance; Transistors;
Conference_Titel :
Device Research Conference (DRC), 2014 72nd Annual
Conference_Location :
Santa Barbara, CA
Print_ISBN :
978-1-4799-5405-6
DOI :
10.1109/DRC.2014.6872394
