Title :
Current gain of amorphous silicon thin-film transistors above the cutoff frequency
Author :
Rieutort-Louis, Warren ; Liechao Huang ; Yingzhe Hu ; Sanz-Robinson, Josue ; Moy, Tiffany ; Afsar, Yasmin ; Sturm, James C. ; Verma, Naveen ; Wagner, Steffen
Author_Institution :
Dept. of Electr. Eng., Princeton Univ., Princeton, NJ, USA
Abstract :
In this paper we (1) show above-ft measurements for standard bottom-gate amorphous silicon (a-Si) TFTs and self-aligned bottom-gate a-Si TFTs and (2) illustrate how large TFT gate-drain capacitances lead to a slow current-gain roll-off at frequencies above ft.
Keywords :
elemental semiconductors; silicon; thin film transistors; Si; TFT gate-drain capacitances; above-ft measurement; amorphous silicon thin-film transistors; current-gain roll-off; cutoff frequency; self-aligned bottom-gate amorphous silicon TFT; standard bottom-gate amorphous silicon TFT; Amorphous silicon; Capacitance; Current measurement; Cutoff frequency; Frequency measurement; Logic gates; Thin film transistors;
Conference_Titel :
Device Research Conference (DRC), 2014 72nd Annual
Conference_Location :
Santa Barbara, CA
Print_ISBN :
978-1-4799-5405-6
DOI :
10.1109/DRC.2014.6872403
