DocumentCode
1777399
Title
The effect of electric field induced magnetic anisotropy in ferromagnetic resonance in magnetic tunnel junctions
Author
Yang Lv ; Hui Zhao ; Xiaohui Chao ; Jian-Ping Wang
Author_Institution
Dept. of Electr. & Comput. Eng., Univ. of Minnesota, Minneapolis, MN, USA
fYear
2014
fDate
22-25 June 2014
Firstpage
291
Lastpage
292
Abstract
The electric field induced magnetic anisotropy (EMA) has been observed through ferromagnetic resonance (FMR) in magnetic tunnel junctions (MTJs) by varying the DC bias voltage [1,2]. In this work, however, we show that by changing the magnetization and field setup, the effect of EMA in FMR can be observed and distinguished without an application of DC bias voltage.
Keywords
ferromagnetic resonance; magnetic anisotropy; magnetic tunnelling; DC bias voltage; EMA effect; FMR; MTJ; electric field induced magnetic anisotropy; ferromagnetic resonance; magnetic tunnel junctions; magnetization; Magnetic anisotropy; Magnetic heads; Magnetic resonance; Magnetic tunneling; Shape; Torque; Tunneling magnetoresistance;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference (DRC), 2014 72nd Annual
Conference_Location
Santa Barbara, CA
Print_ISBN
978-1-4799-5405-6
Type
conf
DOI
10.1109/DRC.2014.6872411
Filename
6872411
Link To Document