Title :
A digitally controlled threshold adjustment circuit in a 0.13µm SiGe BiCMOS technology for receiving multilevel signals up to 80Gbps
Author :
De Keulenaer, Timothy ; Torfs, Guy ; Pierco, Ramses ; Bauwelinck, Johan
Author_Institution :
INTEC, Ghent Univ., Ghent, Belgium
fDate :
June 30 2014-July 3 2014
Abstract :
In this paper, a high bandwidth digitally controlled threshold adjustment circuit is proposed which can be used for demodulating high-speed multi-level signals. Simulations of the bandwidth are presented together with measurements of the control currents to indicate the threshold adjustment capability. A bandwidth above 80GHz in a 0.13μm SiGe BiCMOS technology and a threshold tunable between ±160mV in steps of 0.6mV is achieved, allowing very precise control of the threshold level. This allows the circuit to accurately position the threshold on the eye-crossing of a high speed multi-level signals. By applying this circuit to demodulate a duobinary signal over a 40GHz channel, a data rate of up to 80Gbps can be achieved.
Keywords :
BiCMOS digital integrated circuits; Ge-Si alloys; demodulation; millimetre wave integrated circuits; semiconductor materials; BiCMOS technology; SiGe; control currents; duobinary signal; high bandwidth digitally controlled threshold adjustment circuit; high-speed multilevel signal demodulation; multilevel signals; size 0.13 mum; threshold level; voltage 0.6 mV; Backplanes; Bandwidth; BiCMOS integrated circuits; Mirrors; Resistors; Silicon germanium; Transistors;
Conference_Titel :
Ph.D. Research in Microelectronics and Electronics (PRIME), 2014 10th Conference on
Conference_Location :
Grenoble
DOI :
10.1109/PRIME.2014.6872659