Title :
Towards the determination of GaN HEMT large signal model parameters by Time Domain Reflectometry method
Author :
Bernat, M. ; Satka, A. ; Chvala, A. ; Kovac, J. ; Sladek, L. ; Donoval, D.
Author_Institution :
Inst. of Electron. & Photonics, Slovak Univ. of Technol., Bratislava, Slovakia
fDate :
June 30 2014-July 3 2014
Abstract :
In this paper we report a development of the large signal model parameters extraction technique for gallium nitride (GaN) high electron mobility transistors (HEMT) from transient characteristics. An approach to nonlinear large-signal model parameter extraction of intrinsic model parameters namely capacitors CGS, CDS and CGD and extrinsic resistance RGS and RDS has been investigated. The extraction procedure is based on electronic circuit parametric simulation of the transient characteristics of the investigated equivalent circuit and evaluation of corresponding RC time constants. This technique is improved using appropriate polarity of the input pulses in dual-head Time Domain Reflectometry (TDR) system, configured also for Time Domain Transmission (TDT) measurements.
Keywords :
III-V semiconductors; equivalent circuits; gallium compounds; high electron mobility transistors; time-domain reflectometry; transient analysis; GaN; HEMT; RC time constants; TDT measurements; dual-head TDR system; electronic circuit parametric simulation; equivalent circuit; extrinsic resistance; gallium nitride; high electron mobility transistors; input pulses polarity; intrinsic model parameters; large signal model parameters extraction technique; time domain reflectometry method; time domain transmission; transient characteristics; HEMTs; Logic gates; Probes; Pulse measurements; Time measurement; Time-domain analysis; GaN HEMT; model parameters; time domain reflectometry and transmission;
Conference_Titel :
Ph.D. Research in Microelectronics and Electronics (PRIME), 2014 10th Conference on
Conference_Location :
Grenoble
DOI :
10.1109/PRIME.2014.6872690
