Title :
Design considerations for monolithically integrated fully-depleted CMOS image sensors
Author :
Lincelles, J.B. ; Marcelot, O. ; Magnan, P. ; Saint-Pe, O.
Author_Institution :
Integrated Image Sensor Lab., ISAE, Toulouse, France
fDate :
June 30 2014-July 3 2014
Abstract :
We present a design study for the fabrication of a fully depleted CMOS image sensor integrated on high-resistivity epitaxial layer. Both models and simulations are used and show that the maximal depleted thickness and the punch-trough current are dependent on the photo-diode cathode length. From these considerations, achievable performances are estimated.
Keywords :
CMOS image sensors; integrated circuit design; integrated circuit modelling; monolithic integrated circuits; photocathodes; photodetectors; photodiodes; semiconductor epitaxial layers; high-resistivity epitaxial layer; maximal depleted thickness; monolithically integrated fully-depleted CMOS image sensor; photodiode cathode length; punch-trough current; CMOS integrated circuits; Cathodes; Data models; Epitaxial growth; Silicon; Three-dimensional displays; CMOS image sensor; fully-depleted; high resistivity silicon;
Conference_Titel :
Ph.D. Research in Microelectronics and Electronics (PRIME), 2014 10th Conference on
Conference_Location :
Grenoble
DOI :
10.1109/PRIME.2014.6872697
