DocumentCode :
1777596
Title :
The design and measurement of test system for dynamic characteristics of IGBT
Author :
Kaikai Zou ; Lei Qi ; Xiang Cui ; Guoliang Zhao ; Bo Zong
Author_Institution :
Dept. of State Key Lab. for Alternate Electr. Power Syst. with Renewable Energy Sources, North China Electr. Power Univ., Beijing, China
fYear :
2014
fDate :
20-22 Oct. 2014
Firstpage :
2209
Lastpage :
2216
Abstract :
With the fast development of power electronic technology, voltage source converter based on IGBT have been widely used in the field of high voltage direct current (HVDC) and IGBT are more and more widely utilized. So, Studying on the characteristics of IGBT is more and more important. The static characteristic of IGBT can be got from the Datasheet, but the dynamic characteristic must be got by experiment. So, How to get the accurate waveform of the dynamic characteristic is significant. In this paper, How to design the test circuit based on double-pulse method is proposed, also how to decide all the parameters in the circuit and how it work are elaborated deeply. We focus on some important factors, such as the oscillation frequency of the LC loop, the time constant of load inductance during discharging, the change rate of the bus voltage. Then, an experimental platform has been built for FF450R17ME4 IGBT module of Infineon. On the basis of experimental platform, We analyze the key problems in the measurement of dynamic characteristics by theoretical analysis and experimental verification, such as, the waveform of Vce, Ic during the whole experimental period. The comparison of several ways to measuring voltage and current is given. In order to exclude the electromagnetic interference, eliminate the matching influence of the measuring probe and ensure the waveform is accurate, A shielding box is used and we analyze the influencing factor one by one through experiment. Then, the standard measurement is given ultimately.
Keywords :
electric current measurement; insulated gate bipolar transistors; semiconductor device testing; voltage measurement; FF450R17ME4 IGBT module; HVDC; Infineon; LC loop; bus voltage change rate; double-pulse method; dynamic characteristic; electromagnetic interference; high voltage direct current; load inductance; matching influence; oscillation frequency; power electronic technology; shielding box; test circuit; time constant; voltage source converter; Capacitance; Capacitors; Current measurement; Insulated gate bipolar transistors; Power system dynamics; Probes; Voltage measurement; IGBT; double-pulse test; dynamic characteristic; standard measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power System Technology (POWERCON), 2014 International Conference on
Conference_Location :
Chengdu
Type :
conf
DOI :
10.1109/POWERCON.2014.6993718
Filename :
6993718
Link To Document :
بازگشت