DocumentCode :
1777633
Title :
3-terminal tungsten CMOS-NEM relay
Author :
Riverola, Martin ; Vidal-Alvarez, Gabriel ; Torres, Francesc ; Barniol, Nuria
Author_Institution :
Dept. d´Eng. Electron., Univ. Autonoma de Barcelona, Cerdanyola del Vallés, Spain
fYear :
2014
fDate :
June 30 2014-July 3 2014
Firstpage :
1
Lastpage :
4
Abstract :
The present work describes the design, fabrication and experimental results of a 3-terminal laterally actuated tungsten nanoelectromechanical (NEM) relay which is monolithically integrated in a 0.35 μm commercial standard CMOS technology. The movable structure is released by means of a simple one-step maskless wet etching. The switch shows an abrupt switching with less than 5 mV/decade and a good on-off current ratio of - 104 although it exhibits an on-state contact resistance RON around 500 MΩ. Also, the relay is cycled up to 1500 times in ambient conditions showing great endurance but variability in its contact.
Keywords :
CMOS integrated circuits; etching; microrelays; nanoelectromechanical devices; tungsten; 3-terminal laterally actuated tungsten nanoelectromechanical relay; 3-terminal tungsten CMOS-NEM relay; W; commercial standard CMOS technology; movable structure; on-state contact resistance; one-step maskless wet etching; size 0.35 mum; CMOS integrated circuits; Logic gates; Semiconductor device modeling; CMOS technology; Switches; relays; tungsten;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Ph.D. Research in Microelectronics and Electronics (PRIME), 2014 10th Conference on
Conference_Location :
Grenoble
Type :
conf
DOI :
10.1109/PRIME.2014.6872734
Filename :
6872734
Link To Document :
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