66–87 GHz power amplifier with 20dBm 1-dB compression point and 35% peak PAE in a 55nm SiGe technology

Author

del Rio, David ; Berenguer, Roc ; Rezola, Ainhoa ; Sevillano, Juan Francisco

Author_Institution

Electron. & Commun. Dept., Centro de Estudios e Investig. Tec. (CEIT), San Sebastián, Spain

fYear

2014

fDate

June 30 2014-July 3 2014

Firstpage

1

Lastpage

4

Abstract

This paper presents the design of a mm-Wave PA for a transmitter of an E-Band mobile backhaul network, implemented using a 55nm SiGe BiCMOS technology. It has a 4-stage balanced CE configuration and the outputs are converted to single-ended using an integrated balun, which provides insertion losses smaller than 1dB at E-Band frequencies. The PA presents a maximum S21 of 15.5 dB at 74GHz and its 3-dB bandwidth covers from 66 to 87 GHz. Its output 1-dB compression point has a maximum of 20dBm and is above 18.75dBm across the whole E-Band, with a peak PAE of 35%. The different stages are externally biased and the Vcc voltage is 1.5V. The total DC power consumption is 275 mW.

Keywords

Ge-Si alloys; baluns; millimetre wave power amplifiers; semiconductor materials; 4-stage balanced CE configuration; DC power consumption; E-Band frequency; E-Band mobile backhaul network; compression point; efficiency 35 percent; frequency 66 GHz to 87 GHz; insertion loss; integrated balun; mm-Wave PA design; peak PAE; power 275 mW; power amplifier; silicon-germanium BiCMOS technology; size 55 nm; voltage 1.5 V; BiCMOS integrated circuits; Capacitors; Topology; Transceivers; 55nm; BiCMOS integrated circuits; E-Band; Power amplifier; SiGe; mm-wave;

fLanguage

English

Publisher

ieee

Conference_Titel

Ph.D. Research in Microelectronics and Electronics (PRIME), 2014 10th Conference on

Conference_Location

Grenoble

Type

conf

DOI

10.1109/PRIME.2014.6872747

Filename

6872747