FF-DICE: An 8T soft-error tolerant cell using Independent Dual Gate SOI FinFETs

In this paper we present FF-DICE (Footless-FinFET-DICE), an 8T footless storage element that exhibits soft error resilience characteristics to Single Event Upsets. The proposed cell utilises IDG (Independent Dual Gate) FinFETs to merge the functions of a typical cell´s NMOS drivers and NMOS access transistors, thereby saving 33% of the transistors required for a typical DICE cell. Given the IDG FinFET dual gate mutual coupling and excellent control over the transistor conductive channel, simulations show that the proposed cell can operate as a regular memory cell, with Static Voltage Noise Margin of 341mV, Static Current Noise Margin of 15uA and provides soft-error immunity to particle strikes on single nodes, as well as considerable area savings compared to similar designs.