DocumentCode :
1778203
Title :
Effect of ionizing radiation on TRNGs for safe telecommunications: Robustness and randomness
Author :
Martin, Harold ; Vaskova, A. ; Lopez-Ongil, C. ; San Millan, Enrique ; Portela-Garcia, M.
Author_Institution :
Electron. Technol. Dept., Carlos III Univ. of Madrid, Leganes, Spain
fYear :
2014
fDate :
7-9 July 2014
Firstpage :
202
Lastpage :
205
Abstract :
True-random number generators (TRNGs) are being recently defined, designed and prototyped on digital electronic circuits, like part of encryption and decryption algorithms. They provide very interesting results in terms of security and cost. In harsh environments, like aerospace applications, Single Event Upsets (SEUs) are a main concern. TRNGs are currently used in satellite communications to enhance security by ciphering critical data. This work studies the effects of SEUs on a particular architecture of TRNGs. The analysis is performed by injecting fault models in a physical TRNG implementation.
Keywords :
SRAM chips; cryptography; field programmable gate arrays; radiation hardening (electronics); random number generation; satellite communication; telecommunication security; SRAM-based FPGA; TRNGs; aerospace applications; critical data ciphering; decryption algorithms; digital electronic circuits; encryption algorithms; fault injection models; harsh environments; ionizing radiation effect; satellite communications; security enhancement; single event upsets; telecommunication safety; true-random number generators; Circuit faults; Field programmable gate arrays; Generators; Integrated circuit modeling; NIST; Registers; Security; Ionaizing radiation; SEU; TRNG; fault-tolerant; reliability;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
On-Line Testing Symposium (IOLTS), 2014 IEEE 20th International
Conference_Location :
Platja d´Aro, Girona
Type :
conf
DOI :
10.1109/IOLTS.2014.6873697
Filename :
6873697
Link To Document :
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