A 1.55-μm waveband optical absorption characterization of highly-stacked InAs/InGaAlAs quantum dot structure for electro-absorption devices

Author

Yamamoto, Naoji ; Akahane, Kouichi ; Umezawa, Toshimasa ; Kawanishi, Tetsuyas

Author_Institution

Nat. Inst. of Inf. & Commun. Technol. (NICT) Tokyo, Koganei, Japan

fYear

2014

fDate

20-23 Oct. 2014

Firstpage

93

Lastpage

96

Abstract

We have successfully developed a quantum dot (QD) electro-absorption device with a highly stacked InAs/InGaAlAs QD structure. A 1.55-μm waveband electro-absorption effect and a quantum confined Stark effect of approximately 22 meV under the application of a 9.0-V reverse bias voltage are clearly observed in the developed QD device.

Keywords

III-V semiconductors; electro-optical modulation; electroabsorption; indium compounds; quantum confined Stark effect; semiconductor quantum dots; InAs-InGaAlAs; QD device; electron volt energy 22 meV; highly stacked InAs/InGaAlAs QD structure; highly-stacked InAs/InGaAlAs quantum dot structure; quantum confined Stark effect; quantum dot electro-absorption device; reverse bias voltage; voltage 9 V; waveband electro-absorption effect; waveband optical absorption characterization; wavelength 1.55 mum; High-speed optical techniques; Optical amplifiers; Optical devices; Optical fibers; Photonics; electro-absorption; optical modulator; quantum confined Stark effect; quantum dot; waveguide device;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Photonics (MWP) and the 2014 9th Asia-Pacific Microwave Photonics Conference (APMP), 2014 International Topical Meeting on

Conference_Location

Sapporo

Type

conf

DOI

10.1109/MWP.2014.6994499

Filename

6994499