DocumentCode :
1778355
Title :
An equivalent circuit model for germanium waveguide vertical photodetectors on Si
Author :
Jeong-Min Lee ; Woo-Young Choi
Author_Institution :
Dept. of Electr. & Electron. Eng., Yonsei Univ., Seoul, South Korea
fYear :
2014
fDate :
20-23 Oct. 2014
Firstpage :
139
Lastpage :
141
Abstract :
We present an equivalent circuit model for 1.55-μm germanium waveguide vertical photo detector on a Si-on-Insulator (SOI) substrate. The model has two current sources for modeling photogenerated carriers so that those carriers experiencing drift and diffusion within the Ge intrinsic layer can be independently modeled. The model provides photo detection frequency response simulation results that match very well with the measurement results. It should be very useful for designing integrated Si optical receiver.
Keywords :
equivalent circuits; germanium; integrated optics; optical design techniques; optical receivers; optical waveguides; photodetectors; silicon-on-insulator; Ge intrinsic layer; SOI; Si-on-Insulator substrate; current sources; diffusion; drift; equivalent circuit model; germanium waveguide vertical photodetectors; integrated Si optical receiver designing; photodetection frequency response simulation; photogenerated carriers; wavelength 1.55 mum; Equivalent circuits; Frequency measurement; Integrated circuit modeling; Optical waveguides; Photonics; Semiconductor device modeling; Silicon; Equivalent circuit model; germanium photo detector; optical interconnect; silicon photonics;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Photonics (MWP) and the 2014 9th Asia-Pacific Microwave Photonics Conference (APMP), 2014 International Topical Meeting on
Conference_Location :
Sapporo
Type :
conf
DOI :
10.1109/MWP.2014.6994512
Filename :
6994512
Link To Document :
بازگشت