An equivalent circuit model for germanium waveguide vertical photodetectors on Si

Author

Jeong-Min Lee ; Woo-Young Choi

Author_Institution

Dept. of Electr. & Electron. Eng., Yonsei Univ., Seoul, South Korea

fYear

2014

fDate

20-23 Oct. 2014

Firstpage

139

Lastpage

141

Abstract

We present an equivalent circuit model for 1.55-μm germanium waveguide vertical photo detector on a Si-on-Insulator (SOI) substrate. The model has two current sources for modeling photogenerated carriers so that those carriers experiencing drift and diffusion within the Ge intrinsic layer can be independently modeled. The model provides photo detection frequency response simulation results that match very well with the measurement results. It should be very useful for designing integrated Si optical receiver.

Keywords

equivalent circuits; germanium; integrated optics; optical design techniques; optical receivers; optical waveguides; photodetectors; silicon-on-insulator; Ge intrinsic layer; SOI; Si-on-Insulator substrate; current sources; diffusion; drift; equivalent circuit model; germanium waveguide vertical photodetectors; integrated Si optical receiver designing; photodetection frequency response simulation; photogenerated carriers; wavelength 1.55 mum; Equivalent circuits; Frequency measurement; Integrated circuit modeling; Optical waveguides; Photonics; Semiconductor device modeling; Silicon; Equivalent circuit model; germanium photo detector; optical interconnect; silicon photonics;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Photonics (MWP) and the 2014 9th Asia-Pacific Microwave Photonics Conference (APMP), 2014 International Topical Meeting on

Conference_Location

Sapporo

Type

conf

DOI

10.1109/MWP.2014.6994512

Filename

6994512