Title :
Influence of the carrier lifetime on the silicon solar cells radiation resistance
Author :
Getman, A.V. ; Dushejko, M.G. ; Ivashchuk, A.V. ; Fadieiev, M.S. ; Yakymenko, Y.I.
Author_Institution :
Dept. of Microelectron., NTUU Kyiv Polytech. Inst., Kiev, Ukraine
Abstract :
In that paper were presented results of the development and research of the silicon space solar cells. Nowadays the A3B5 multilayer solar cells is actively developed in the sphere of constructing of the spacecraft power supply systems, as well as for the low-orbit applications the silicon solar cells usage is still expedient. Research was performed on the solar cells with the n+ - p - p+ structure. Silicon solar cells were exposed to the electron flux with energy 7 MeV. The accelerated electron flux density was 3·108 cm-2s-1 in the atmosphere. Absorbed radiation dose was up to 100 krad (Si).
Keywords :
elemental semiconductors; radiation protection; silicon; solar cells; space power generation; A3B5 multilayer solar cells; silicon solar cells radiation resistance; spacecraft power supply system; Charge carrier lifetime; Degradation; Photovoltaic cells; Radiation effects; Radiative recombination; Resistance; Silicon; carrier lifetime; photo-voltaic converter; radiation hardness; silicon wafer; solar cell;
Conference_Titel :
Electronics and Nanotechnology (ELNANO), 2014 IEEE 34th International Conference on
Conference_Location :
Kyiv
Print_ISBN :
978-1-4799-4581-8
DOI :
10.1109/ELNANO.2014.6873929