• DocumentCode
    1778563
  • Title

    Influence of the carrier lifetime on the silicon solar cells radiation resistance

  • Author

    Getman, A.V. ; Dushejko, M.G. ; Ivashchuk, A.V. ; Fadieiev, M.S. ; Yakymenko, Y.I.

  • Author_Institution
    Dept. of Microelectron., NTUU Kyiv Polytech. Inst., Kiev, Ukraine
  • fYear
    2014
  • fDate
    15-18 April 2014
  • Firstpage
    227
  • Lastpage
    229
  • Abstract
    In that paper were presented results of the development and research of the silicon space solar cells. Nowadays the A3B5 multilayer solar cells is actively developed in the sphere of constructing of the spacecraft power supply systems, as well as for the low-orbit applications the silicon solar cells usage is still expedient. Research was performed on the solar cells with the n+ - p - p+ structure. Silicon solar cells were exposed to the electron flux with energy 7 MeV. The accelerated electron flux density was 3·108 cm-2s-1 in the atmosphere. Absorbed radiation dose was up to 100 krad (Si).
  • Keywords
    elemental semiconductors; radiation protection; silicon; solar cells; space power generation; A3B5 multilayer solar cells; silicon solar cells radiation resistance; spacecraft power supply system; Charge carrier lifetime; Degradation; Photovoltaic cells; Radiation effects; Radiative recombination; Resistance; Silicon; carrier lifetime; photo-voltaic converter; radiation hardness; silicon wafer; solar cell;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronics and Nanotechnology (ELNANO), 2014 IEEE 34th International Conference on
  • Conference_Location
    Kyiv
  • Print_ISBN
    978-1-4799-4581-8
  • Type

    conf

  • DOI
    10.1109/ELNANO.2014.6873929
  • Filename
    6873929