DocumentCode :
1778568
Title :
Comparison of wet and vapor methods of porous silicon formation on solar cells surface
Author :
Obukhova, Tetyana ; Tanchuk, Igor
Author_Institution :
Microelectron. Dept., NTUU “KPI”, Kiev, Ukraine
fYear :
2014
fDate :
15-18 April 2014
Firstpage :
154
Lastpage :
155
Abstract :
In the paper the processes of formation of porous silicon via wet chemical etching and vapor chemical etching on surface of solar cells were studied. Dependence of main solar cells parameters from etching time for two different method of porous silicon formation was investigated. It was shown that in the case of wet chemical etching efficiency of solar cells increased due to short circuit current (formation of antireflective coating) and in the case of vapor chemical etching due to open circuit voltage (formation of passivating coating).
Keywords :
antireflection coatings; elemental semiconductors; etching; passivation; porous semiconductors; short-circuit currents; silicon; solar cells; Si; antireflective coating; open circuit voltage; passivating coating formation; porous silicon formation; short circuit current; solar cells surface; vapor chemical etching; wet chemical etching; Chemicals; Coatings; Etching; Ions; Photovoltaic cells; Silicon; antireflection coating; chemical etching; porous silicon; solar cell; vapor etching;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronics and Nanotechnology (ELNANO), 2014 IEEE 34th International Conference on
Conference_Location :
Kyiv
Print_ISBN :
978-1-4799-4581-8
Type :
conf
DOI :
10.1109/ELNANO.2014.6873933
Filename :
6873933
Link To Document :
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