Title :
Ballistic transport in threenitrids
Author :
Bol, Konstantin ; Moskaliuk, Volodymyr
Author_Institution :
Phys. & Biomed. Electron. Dept., Nat. Tech. Univ. of Ukraine Kyiv Polytech. Inst., Kiev, Ukraine
Abstract :
Based on relaxation equations of energy balance, momentum and occupation of valleys was modelling the transitional effect "overshoot” of drift velocity in threenitrids osn the example of aluminium nitride, gallium nitride, indium nitride. The possibility of multiple exceeding over the stationary values.
Keywords :
III-V semiconductors; aluminium compounds; ballistic transport; gallium compounds; indium compounds; many-valley semiconductors; wide band gap semiconductors; AlN; GaN; InN; aluminium nitride; ballistic transport; drift velocity; energy balance; gallium nitride; indium nitride; relaxation equations; stationary values; threenitrids; transitional effect; valley momentum; valley occupation; Electric fields; Electron mobility; Equations; Gallium nitride; Indium; Mathematical model; Temperature measurement; „overshoot” of drift velocity; aluminium nitride; energy relaxation; gallium nitride; indium nitride; intervalley relaxation; multivalley semiconductors; times of momentum;
Conference_Titel :
Electronics and Nanotechnology (ELNANO), 2014 IEEE 34th International Conference on
Conference_Location :
Kyiv
Print_ISBN :
978-1-4799-4581-8
DOI :
10.1109/ELNANO.2014.6873937
