Title :
The dependence of Si/AIIIBV light source photoluminescence efficiency on dynamic displacements of atoms in the crystal lattice
Author :
Osinsky, Vladimyr ; Deminskyi, Petro ; Lyahova, Natalia ; Syhoviy, Nina ; Honarmand, Hooshmand
Author_Institution :
Dept. of Optoelectron., Inst. of Microdevices, Kiev, Ukraine
Abstract :
The efficiency of light emitting diode (LED) depends on: (1) the choice of technological regimes; (2) temperature properties of the materials used to form heterostructures; (3) the concentration of defects in the grown films. Based on studies of standard dynamic displacements of atoms in the crystal lattice of GaN and InxGa1-xN compared with AlGaInP solid solutions, we aimed to prove application of InxGa1-xN for monolithic integration of Si/AIIIBV RGB light sources in one technological process. We developed a software that allows you to specify the percentage distribution of the active layers for R, G, B-light radiation channels on the chip surface.
Keywords :
III-V semiconductors; crystal structure; gallium compounds; indium compounds; light emitting diodes; p-n junctions; photoluminescence; semiconductor epitaxial layers; wide band gap semiconductors; GaN-InxGa1-xN; LED; Si-AIIIBV RGB light sources; Si-AIIIBV light source photoluminescence efficiency; atom dynamic displacements; chip surface; crystal lattice; defect concentration; heterostructures; light emitting diode efficiency; light radiation channels; monolithic integration; temperature properties; thin films; Crystals; Gallium nitride; Lattices; Light emitting diodes; Quantum well devices; Silicon; Solids; AIIIBV; GaN; InxGa1−xN; LED; RGB; Si/AIIIBV; dynamic displacements; epitaxy; light;
Conference_Titel :
Electronics and Nanotechnology (ELNANO), 2014 IEEE 34th International Conference on
Conference_Location :
Kyiv
Print_ISBN :
978-1-4799-4581-8
DOI :
10.1109/ELNANO.2014.6873938
