DocumentCode :
1778585
Title :
Sputtered gold nano-structure for photovoltaic applications
Author :
Axelevitch, Alexander ; Gorenstein, Boris
Author_Institution :
Eng. Fac., Holon Inst. of Technol. (HIT), Holon, Israel
fYear :
2014
fDate :
15-18 April 2014
Firstpage :
183
Lastpage :
187
Abstract :
Islet ultra-thin gold films are used extensively in various fields of science and technology in recent years. Their widespread use is based on the occurrence of plasmon-polaritons in these films upon irradiation with light. When exposed to light, small gold particles are polarized and electrons within them begin to oscillate together. To produce such nano-dimensional gold islands, we used various deposition techniques: triode sputtering in the low-pressure plane plasma discharge, magnetron sputtering, and thermal evaporation methods. In our experiments, island gold films were embedded into the p-n junction of a silicon photovoltaic structures using the sputtering method. The resulting samples of silicon solar cells with the non-continuous gold interlayer showed a substantial increase in efficiency.
Keywords :
discontinuous metallic thin films; elemental semiconductors; evaporation; gold; nanofabrication; nanostructured materials; p-n junctions; photovoltaic effects; plasma deposition; plasmonics; plasmons; polaritons; semiconductor-metal boundaries; silicon; solar cells; sputter deposition; vacuum deposition; Au-Si; deposition technique; islet ultrathin gold films; light irradiation; low-pressure plane plasma discharge; magnetron sputtering; nanodimensional gold islands; noncontinuous gold interlayer; p-n junction; photovoltaic applications; plasmon-polariton occurrence; silicon photovoltaic structures; silicon solar cells; sputtered gold nanostructure; thermal evaporation; triode sputtering; Films; Gold; Photovoltaic cells; Plasmons; Silicon; Sputtering; gold island films; photovoltaic devices; plasmon-polariton; sputtering;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronics and Nanotechnology (ELNANO), 2014 IEEE 34th International Conference on
Conference_Location :
Kyiv
Print_ISBN :
978-1-4799-4581-8
Type :
conf
DOI :
10.1109/ELNANO.2014.6873941
Filename :
6873941
Link To Document :
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