Title :
Properties of aluminum oxynitride films prepared by reactive magnetron sputtering
Author :
Borisova, A. ; Machulyansky, B. Babych A. ; Rodionov, M. ; Yakimenko, Y.
Author_Institution :
NTUU “Kiev Polytech. Inst.”, Kiev, Ukraine
Abstract :
Influence of technological modes of synthesis of aluminum oxynitride films by a method of magnetron reactive sputtering on their physical and chemical parameters is probed. Studied by IR spectroscopy and Auger electron microscopy and elemental, phase and structural composition of the synthesized films. Features of spectral and electro-physical parameters of films are discussed. Chemical stability of films is probed. Recommendations about modes of synthesis of films of electro-physical parameters of films providing optimization on the given their operational properties are received.
Keywords :
Auger electron spectra; aluminium compounds; electron microscopy; infrared spectra; sputter deposition; thermal stability; thin films; Al3O3N; Auger electron microscopy; IR spectroscopy; aluminum oxynitride films; chemical parameters; chemical stability; electro-physical parameters; elemental composition; operational properties; phase composition; physical parameters; reactive magnetron sputtering; spectral parameters; structural composition; Aluminum; III-V semiconductor materials; Magnetic films; Sputtering; Substrates; Thermal stability; aluminum oxynitride film; chemical resistance; dielectric strength; magnetron reactive sputtering; thermal stability;
Conference_Titel :
Electronics and Nanotechnology (ELNANO), 2014 IEEE 34th International Conference on
Conference_Location :
Kyiv
Print_ISBN :
978-1-4799-4581-8
DOI :
10.1109/ELNANO.2014.6873942
