Photoelectrical properties of Al/nanocrystalline CeOx/Si/Al structures

Author

Maksimchuk, N.V. ; Korolevych, L.N. ; Borisov, A.V.

Author_Institution

Kiev Polytech. Inst., Nat. Tech. Univ. of Ukraine, Kiev, Ukraine

fYear

2014

fDate

15-18 April 2014

Firstpage

101

Lastpage

104

Abstract

Al/nanocrystalline CeOx/Si/Al structures have been obtained using flash evaporation method. The effect of technological factors (substrate temperature and type) on the CeO_x films microstructure as well as on photoelectric properties of the Al/nc-CeOx/Si/Al structures has been investigated. The method of high-frequency C-V characteristics was used to study the cerium oxide film/singlecrystalline silicon interface. On the basis of the synthesized nanocrystalline (nc) CeO_x films obtained by the flash method we have developed new types of heterojunction photodetectors with enhanced photosensitivity (330 uA/lm·V) in the visible range. A stable metal/nc-CeOx/Si structures have been received that reveal an interface state desity of 7·10¹⁰cm^-2eV^-1 and a DC dielectric constant of about 15.

Keywords

MIS structures; aluminium; cerium compounds; elemental semiconductors; evaporation; high-frequency effects; interface states; nanocomposites; nanofabrication; permittivity; photodetectors; photodiodes; photoelectricity; semiconductor heterojunctions; silicon; thin films; vacuum deposition; Al-CeO_x-Si-Al; Al-nanocrystalline CeO_x-Si-Al structures; DC dielectric constant; cerium oxide film-single crystalline silicon interface; films; flash evaporation method; heterojunction photodetectors; high-frequency C-V characteristics; interface state density; photoelectrical properties; photosensitivity; substrate temperature; visible range; Cerium; Films; Heterojunctions; Silicon; Substrates; Temperature; Al/CeOx/Si/Al structure; CeO2; CeO2O3; CeOx; heterojunction; metal/oxide/semiconductor photodiode; nanocrystalline cerium oxide films;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics and Nanotechnology (ELNANO), 2014 IEEE 34th International Conference on

Conference_Location

Kyiv

Print_ISBN

978-1-4799-4581-8

Type

conf

DOI

10.1109/ELNANO.2014.6873946

Filename

6873946