Title :
Self-biased CMOS current reference based on the ZTC operation condition
Author :
Toledo, Pedro ; Klimach, Hamilton ; Cordova, David ; Bampi, Sergio ; Fabris, Eric
Author_Institution :
NSCAD Microeletronica, PGMICRO - UFRGS, Porto Alegre, Brazil
Abstract :
A self-biased current reference based on the MOSFET Zero Temperature Coefficient (ZTC) condition is presented. It can be implemented in any CMOS process and it provides a simple alternative to design a reference current suitable for low TC biasing. This topology was designed in a 0.18 μm process to generate 5 μA under a supply voltage from 1.4V to 1.8 V, spending a silicon area around 0.010mm2. From circuit simulations, the current reference is estimated to have a temperature coefficient (TCeff ) of 15 ppm/°C from -40 to +85 °C and a fabrication sensitivity of σ/μ = 4.5%, including average process and local mismatch variability. The power supply sensitivity resulted around 1%V for this new reference.
Keywords :
CMOS integrated circuits; MOSFET circuits; reference circuits; MOSFET zero temperature coefficient; ZTC operation condition; circuit simulations; current 5 muA; local mismatch variability; low TC biasing; power supply sensitivity; self-biased CMOS current reference; size 0.18 mum; temperature -40 degC to 85 degC; voltage 1.4 V to 1.8 V; CMOS integrated circuits; Logic gates; MOSFET; Resistors; Temperature dependence; Threshold voltage; Current Reference Source; Low Temperature Coefficient; ZTC Operating Point;
Conference_Titel :
Integrated Circuits and Systems Design (SBCCI), 2014 27th Symposium on
Conference_Location :
Aracaju
DOI :
10.1145/2660540.2660990