• DocumentCode
    1778606
  • Title

    Self-biased CMOS current reference based on the ZTC operation condition

  • Author

    Toledo, Pedro ; Klimach, Hamilton ; Cordova, David ; Bampi, Sergio ; Fabris, Eric

  • Author_Institution
    NSCAD Microeletronica, PGMICRO - UFRGS, Porto Alegre, Brazil
  • fYear
    2014
  • fDate
    1-5 Sept. 2014
  • Firstpage
    1
  • Lastpage
    7
  • Abstract
    A self-biased current reference based on the MOSFET Zero Temperature Coefficient (ZTC) condition is presented. It can be implemented in any CMOS process and it provides a simple alternative to design a reference current suitable for low TC biasing. This topology was designed in a 0.18 μm process to generate 5 μA under a supply voltage from 1.4V to 1.8 V, spending a silicon area around 0.010mm2. From circuit simulations, the current reference is estimated to have a temperature coefficient (TCeff ) of 15 ppm/°C from -40 to +85 °C and a fabrication sensitivity of σ/μ = 4.5%, including average process and local mismatch variability. The power supply sensitivity resulted around 1%V for this new reference.
  • Keywords
    CMOS integrated circuits; MOSFET circuits; reference circuits; MOSFET zero temperature coefficient; ZTC operation condition; circuit simulations; current 5 muA; local mismatch variability; low TC biasing; power supply sensitivity; self-biased CMOS current reference; size 0.18 mum; temperature -40 degC to 85 degC; voltage 1.4 V to 1.8 V; CMOS integrated circuits; Logic gates; MOSFET; Resistors; Temperature dependence; Threshold voltage; Current Reference Source; Low Temperature Coefficient; ZTC Operating Point;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Integrated Circuits and Systems Design (SBCCI), 2014 27th Symposium on
  • Conference_Location
    Aracaju
  • Type

    conf

  • DOI
    10.1145/2660540.2660990
  • Filename
    6994642