Title :
Sub-1 V supply nano-watt MOSFET-only threshold voltage extractor circuit
Author :
Mattia, Oscar E. ; Klimach, Hamilton ; Bampi, Sergio
Author_Institution :
Microelectron. Grad. Program, Fed. Univ. of Rio Grande do Sul, Porto Alegre, Brazil
Abstract :
This work presents a self-biased MOSFET threshold voltage VT0 extractor circuit. Its working principle is based on a current-voltage relationship derived from a continuous physical model. The model is valid for any operating condition, from weak to strong inversion, and under triode or saturation regimes. The circuit is MOSFET-only (can be implemented in any standard digital process), and it operates with a power supply of less than 1 V, consuming tenths of nW. Post-layout simulation results show that the extracted VT0 has an error inferior to 1.3%, when compared to the theoretical value, for a -40 to 125°C temperature range. We present variability results from Monte Carlo simulations that support the extracting behavior of the circuit with good accuracy. The occupied silicon area is 0.0076 mm2 in a 0.13μm CMOS process.
Keywords :
CMOS integrated circuits; MOSFET; Monte Carlo methods; integrated circuit layout; triodes; CMOS process; Monte Carlo simulations; continuous physical model; current-voltage relationship; nanowatt MOSFET; post-layout simulation; saturation regimes; self-biased MOSFET; size 0.13 mum; standard digital process; temperature -40 degC to 125 degC; threshold voltage extractor circuit; triode; voltage 1 V; Abstracts; CMOS integrated circuits; CMOS process; Integrated circuit modeling; MOSFET; Semiconductor device modeling; CMOS Analog Design; Nano-Power; Threshold Voltage Extractor;
Conference_Titel :
Integrated Circuits and Systems Design (SBCCI), 2014 27th Symposium on
Conference_Location :
Aracaju
DOI :
10.1145/2660540.2660991
