Deep plasma etching process investigation of polyimide materials for forming interlayer connections in microelectronic nodes

Author

Vertyanov, D. ; Timoshenkov, S. ; Golishnikov, A. ; Nazarov, E. ; Putrya, M. ; Korobova, N. ; Kostyukov, D.

Author_Institution

Microelectron. Dept., Nat. Res. Univ. of Electron. Technol., Moscow, Russia

fYear

2014

fDate

15-18 April 2014

Firstpage

54

Lastpage

57

Abstract

Research results of ion - initiated etching processes of polymer films based on polyimide in oxygen plasma, sulfur hexafluoride and oxygen-argon mixtures of low pressure (around 10-12 Pa) have been shown. Operating modes of deep plasma chemical polyimide etching have been established using IDP TM RHS 100 installation. Optimal values of main technological parameters: etching rate - 0.8 μm/min, sample etching uniformity-not less than 92%; anisotropy - 0.95 have been determined.

Keywords

polymer films; sputter etching; IDP TM RHS 100 installation; deep plasma chemical polyimide etching; deep plasma etching process; etching rate; etching uniformity; interlayer connections; ion-initiated etching processes; microelectronic nodes; operating modes; oxygen plasma; oxygen-argon mixtures; polyimide materials; polymer films; sulfur hexafluoride; Etching; Films; Ions; Microelectronics; Plasmas; Polyimides; Sulfur hexafluoride; plasma etching; polyimide foil; reactive ion etching;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics and Nanotechnology (ELNANO), 2014 IEEE 34th International Conference on

Conference_Location

Kyiv

Print_ISBN

978-1-4799-4581-8

Type

conf

DOI

10.1109/ELNANO.2014.6873961

Filename

6873961