Title :
Deep plasma etching process investigation of polyimide materials for forming interlayer connections in microelectronic nodes
Author :
Vertyanov, D. ; Timoshenkov, S. ; Golishnikov, A. ; Nazarov, E. ; Putrya, M. ; Korobova, N. ; Kostyukov, D.
Author_Institution :
Microelectron. Dept., Nat. Res. Univ. of Electron. Technol., Moscow, Russia
Abstract :
Research results of ion - initiated etching processes of polymer films based on polyimide in oxygen plasma, sulfur hexafluoride and oxygen-argon mixtures of low pressure (around 10-12 Pa) have been shown. Operating modes of deep plasma chemical polyimide etching have been established using IDP TM RHS 100 installation. Optimal values of main technological parameters: etching rate - 0.8 μm/min, sample etching uniformity-not less than 92%; anisotropy - 0.95 have been determined.
Keywords :
polymer films; sputter etching; IDP TM RHS 100 installation; deep plasma chemical polyimide etching; deep plasma etching process; etching rate; etching uniformity; interlayer connections; ion-initiated etching processes; microelectronic nodes; operating modes; oxygen plasma; oxygen-argon mixtures; polyimide materials; polymer films; sulfur hexafluoride; Etching; Films; Ions; Microelectronics; Plasmas; Polyimides; Sulfur hexafluoride; plasma etching; polyimide foil; reactive ion etching;
Conference_Titel :
Electronics and Nanotechnology (ELNANO), 2014 IEEE 34th International Conference on
Conference_Location :
Kyiv
Print_ISBN :
978-1-4799-4581-8
DOI :
10.1109/ELNANO.2014.6873961
