Title :
Semiconductor microwave resonant elements with electronic control
Author :
Tatarchuk, D.D. ; Molchanov, V.I. ; Didenko, Yu.V. ; Kharabet, Ie I. ; Franchuk, A.S.
Author_Institution :
Dept. of Microelectron., Nat. Tech. Univ. of Ukraine “KPI”, Kiev, Ukraine
Abstract :
The microwave resonant elements with electronic control on the basis of semiconductors p-i-n diodes are considered. The possibility of the existence a high-Q resonance of E-type in semiconductor p-i-n structures in the microwave range is shown. The dependence of the resonance frequency and the unloaded Q-factor of the p-i-n diode from forward current is investigated. The temperature dependences of the resonant frequency and unloaded Q-factor of p-i-n diodes are investigated. The results of experimental research are presented. The possibility of realization of the resonant microwave devices with electronic control on the base of such structures is shown.
Keywords :
Q-factor; microwave diodes; microwave resonators; p-i-n diodes; electronic control; forward current; high-Q E-type resonance; resonant microwave device; semiconductor microwave resonant element; semiconductor p-i-n diode structure; unloaded Q-factor; Dielectrics; Microwave filters; P-i-n diodes; Q-factor; Resonant frequency; Temperature; Temperature dependence; Q-factor; composite material; dielectric loss tangent; dielectric permittivity; resonant frequency; temperature dependences;
Conference_Titel :
Electronics and Nanotechnology (ELNANO), 2014 IEEE 34th International Conference on
Conference_Location :
Kyiv
Print_ISBN :
978-1-4799-4581-8
DOI :
10.1109/ELNANO.2014.6873965
