Semiconductor microwave resonant elements with electronic control

Author

Tatarchuk, D.D. ; Molchanov, V.I. ; Didenko, Yu.V. ; Kharabet, Ie I. ; Franchuk, A.S.

Author_Institution

Dept. of Microelectron., Nat. Tech. Univ. of Ukraine “KPI”, Kiev, Ukraine

fYear

2014

fDate

15-18 April 2014

Firstpage

70

Lastpage

72

Abstract

The microwave resonant elements with electronic control on the basis of semiconductors p-i-n diodes are considered. The possibility of the existence a high-Q resonance of E-type in semiconductor p-i-n structures in the microwave range is shown. The dependence of the resonance frequency and the unloaded Q-factor of the p-i-n diode from forward current is investigated. The temperature dependences of the resonant frequency and unloaded Q-factor of p-i-n diodes are investigated. The results of experimental research are presented. The possibility of realization of the resonant microwave devices with electronic control on the base of such structures is shown.

Keywords

Q-factor; microwave diodes; microwave resonators; p-i-n diodes; electronic control; forward current; high-Q E-type resonance; resonant microwave device; semiconductor microwave resonant element; semiconductor p-i-n diode structure; unloaded Q-factor; Dielectrics; Microwave filters; P-i-n diodes; Q-factor; Resonant frequency; Temperature; Temperature dependence; Q-factor; composite material; dielectric loss tangent; dielectric permittivity; resonant frequency; temperature dependences;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics and Nanotechnology (ELNANO), 2014 IEEE 34th International Conference on

Conference_Location

Kyiv

Print_ISBN

978-1-4799-4581-8

Type

conf

DOI

10.1109/ELNANO.2014.6873965

Filename

6873965