Basics of MIS-type gas sensors with thin nanoporous silicon

This paper presents a model of the electrical transport in MIS structure of metal - thin nanoporous silicon-p-Si. The obtained analytical expressions allow analyzing the contribution of the porous silicon and surface electronic states to the electrical behavior of the structure at gas adsorption. The parameters of surface electronic states for different porous silicon thickness are obtained from analysis of experimental I-V curves and DLTS spectra. The high sensitive hydrogen sensor operated at T_room based on MIS structure with porous silicon layer is considered.