Basics of MIS-type gas sensors with thin nanoporous silicon

Author

Skryshevsky, V.A.

Author_Institution

Inst. of High Technol., Taras Shevchenko Nat. Univ. of Kyiv, Kiev, Ukraine

fYear

2014

fDate

15-18 April 2014

Firstpage

78

Lastpage

82

Abstract

This paper presents a model of the electrical transport in MIS structure of metal - thin nanoporous silicon-p-Si. The obtained analytical expressions allow analyzing the contribution of the porous silicon and surface electronic states to the electrical behavior of the structure at gas adsorption. The parameters of surface electronic states for different porous silicon thickness are obtained from analysis of experimental I-V curves and DLTS spectra. The high sensitive hydrogen sensor operated at T_room based on MIS structure with porous silicon layer is considered.

Keywords

MIS devices; adsorption; elemental semiconductors; gas sensors; hydrogen; nanoporous materials; nanosensors; silicon; DLTS spectra; H; MIS-type gas sensor; Si; electrical transport model; experimental I-V curve; gas adsorption; high sensitive hydrogen sensor; metal-thin nanoporous silicon; surface electronic state; Adsorption; Atmosphere; Hydrogen; Sensitivity; Silicon; Temperature measurement; MIS structure; gas sensor; nanoporous silicon; surface electronic states;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics and Nanotechnology (ELNANO), 2014 IEEE 34th International Conference on

Conference_Location

Kyiv

Print_ISBN

978-1-4799-4581-8

Type

conf

DOI

10.1109/ELNANO.2014.6873967

Filename

6873967