Title :
High-Q current-injection InAs quantum-dot microdisk lasers operating at room temperature
Author :
Cheng-Hao Chu ; Yi Li ; Chih-Yi Cheng ; Ming-Hua Mao
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
We report room-temperature operation of current-injection InAs quantum-dot microdisk lasers with quality factor >23,000. The lasing wavelength is at 1136nm with threshold current of 0.39mA.
Keywords :
III-V semiconductors; Q-factor; indium compounds; laser beams; microdisc lasers; quantum dot lasers; InAs; current 0.39 mA; high-Q current-injection InAs quantum-dot microdisk lasers; lasing wavelength; quality factor; room-temperature operation; temperature 293 K to 298 K; threshold current; wavelength 1136 nm; Etching; Gallium arsenide; Optical waveguides; Pump lasers; Quantum dot lasers; Waveguide lasers;
Conference_Titel :
Photonics Conference (IPC), 2014 IEEE
Conference_Location :
San Diego, CA
DOI :
10.1109/IPCon.2014.6995232
