DocumentCode
1779161
Title
Threshold voltage and transconductance shifting reliance on strained-SiGe channel dimension
Author
Wen-Teng Chang ; Yu-Seng Lin ; Cheng-Ting Shih
Author_Institution
Dept. of Electr. Eng., Nat. Univ. of Kaohsiung, Kaohsiung, Taiwan
fYear
2014
fDate
2-4 June 2014
Firstpage
101
Lastpage
102
Abstract
Both threshold voltage and transconductance shifting of cap Si and SiGe are consistent with the tendency of the W/L ratio. However, the variation of this critical ratio for the enhancement or degradation in p-channel at different cut areas implies the importance of process stability. The piezoresistance coefficients of [110] strained SiGe elucidates the enhancement or degradation of both p-/n-channels.
Keywords
Ge-Si alloys; electrical conductivity; piezoresistance; semiconductor materials; SiGe; n-channel; p-channel; piezoresistance coefficients; strained-SiGe channel dimension; threshold voltage; transconductance shifting; Degradation; Logic gates; Piezoresistance; Silicon; Silicon germanium; Threshold voltage; Transconductance;
fLanguage
English
Publisher
ieee
Conference_Titel
Silicon-Germanium Technology and Device Meeting (ISTDM), 2014 7th International
Conference_Location
Singapore
Print_ISBN
978-1-4799-5427-8
Type
conf
DOI
10.1109/ISTDM.2014.6874622
Filename
6874622
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