Title :
Phosphorus delta-doping in germanium
Author :
Scappucci, Giordano
Author_Institution :
Sch. of Phys., Univ. of New South Wales, Sydney, NSW, Australia
Abstract :
We have demonstrated that phosphorus delta-doping of germanium in ultra-high vacuum is a promising technique to tune doping at high densities (>1020 cm-3) in thin Ge films. Eventually, high doping densities on demand for photonic or electronic applications may be delivered by suitably choosing the total number of layers, tuning their separation in the δ-layer stack, and engineering the amount of P incorporated in each layer.
Keywords :
doping profiles; elemental semiconductors; germanium; phosphorus; semiconductor doping; semiconductor epitaxial layers; δ-layer stack; Ge:P; doping density; electronic application; germanium thin films; phosphorus delta-doping; photonic application; ultrahigh vacuum; Adsorption; Australia; Decision support systems; Educational institutions; Electronic mail; Germanium; Physics;
Conference_Titel :
Silicon-Germanium Technology and Device Meeting (ISTDM), 2014 7th International
Conference_Location :
Singapore
Print_ISBN :
978-1-4799-5427-8
DOI :
10.1109/ISTDM.2014.6874623
