Title :
Growth temperature effects on graded InxAl1−xAs/GaAs buffer for metamorphic In0.70Ga0.30As/In0.53Al0.47As planar transistor on Ge-on-insulator(GeOI) substrate
Author :
Wicaksono, Satrio ; Kian Hua Tan ; Wan Khai Loke ; Soon Fatt Yoon ; Ivana ; Subramanian, Sivaraman ; Owen, Man Hon Samuel ; Yee-Chia Yeo
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
Abstract :
This paper aims to investigate the effect of substrate temperature on molecular beam epitaxy-grown InxAl1-xAs graded buffer layer. Atomic force microscopy, cross-sectional transmission electron microscopy, and secondary ion mass spectroscopy are used for wafer characterization. TEM images are used to estimate the threading dislocation density in the wafer. To demonstrate the feasibility of this growth method for device integration, HEMT and HBT are also fabricated.
Keywords :
III-V semiconductors; aluminium compounds; atomic force microscopy; buffer layers; dislocation density; gallium arsenide; heterojunction bipolar transistors; high electron mobility transistors; indium compounds; molecular beam epitaxial growth; secondary ion mass spectra; semiconductor epitaxial layers; semiconductor growth; transmission electron microscopy; Ge; Ge-on-insulator substrate; HBT; HEMT; In0.70Ga0.30As-In0.53Al0.47As; InxAl1-xAs-GaAs; TEM; atomic force microscopy; cross-sectional transmission electron microscopy; graded buffer layer; molecular beam epitaxy; planar transistor; secondary ion mass spectroscopy; substrate temperature; threading dislocation density; wafer characterization; Atomic layer deposition; Epitaxial growth; Logic gates; Substrates; Transistors; Transmission electron microscopy;
Conference_Titel :
Silicon-Germanium Technology and Device Meeting (ISTDM), 2014 7th International
Conference_Location :
Singapore
Print_ISBN :
978-1-4799-5427-8
DOI :
10.1109/ISTDM.2014.6874626
