DocumentCode
1779175
Title
A study of hole mobility in the inversion layer of relaxed and strained SiGe PMOS devices
Author
Chen, K.-T. ; Chang, S.T.
Author_Institution
Dept. of E. E., Nat. Chung Hsing Univ., Taichung, Taiwan
fYear
2014
fDate
2-4 June 2014
Firstpage
103
Lastpage
104
Abstract
The hole mobility performance in strained SiGe PMOS devices is studied. Calculations have then been used for considering the impact of device structures including BULK, SOI, and DG, SiGe materials, alloy scattering and biaxial compressive strain owing to (001), (110), and (111) Si substrate orientation on the hole mobility performance to give an indication of the potential performance of this potential PMOS device.
Keywords
Ge-Si alloys; MOSFET; hole mobility; semiconductor materials; silicon-on-insulator; (001) Si substrate orientation; (110) Si substrate orientation; (111) Si substrate orientation; BULK device structures; DG device structure; SOI device structures; Si; SiGe; alloy scattering; biaxial compressive strain; hole mobility; inversion layer; relaxed PMOS devices; strained PMOS devices; MOS devices; Metals; Scattering; Silicon; Silicon germanium; Strain; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Silicon-Germanium Technology and Device Meeting (ISTDM), 2014 7th International
Conference_Location
Singapore
Print_ISBN
978-1-4799-5427-8
Type
conf
DOI
10.1109/ISTDM.2014.6874629
Filename
6874629
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