Title :
A study of hole mobility in the inversion layer of relaxed and strained SiGe PMOS devices
Author :
Chen, K.-T. ; Chang, S.T.
Author_Institution :
Dept. of E. E., Nat. Chung Hsing Univ., Taichung, Taiwan
Abstract :
The hole mobility performance in strained SiGe PMOS devices is studied. Calculations have then been used for considering the impact of device structures including BULK, SOI, and DG, SiGe materials, alloy scattering and biaxial compressive strain owing to (001), (110), and (111) Si substrate orientation on the hole mobility performance to give an indication of the potential performance of this potential PMOS device.
Keywords :
Ge-Si alloys; MOSFET; hole mobility; semiconductor materials; silicon-on-insulator; (001) Si substrate orientation; (110) Si substrate orientation; (111) Si substrate orientation; BULK device structures; DG device structure; SOI device structures; Si; SiGe; alloy scattering; biaxial compressive strain; hole mobility; inversion layer; relaxed PMOS devices; strained PMOS devices; MOS devices; Metals; Scattering; Silicon; Silicon germanium; Strain; Substrates;
Conference_Titel :
Silicon-Germanium Technology and Device Meeting (ISTDM), 2014 7th International
Conference_Location :
Singapore
Print_ISBN :
978-1-4799-5427-8
DOI :
10.1109/ISTDM.2014.6874629
