Title :
Study of Si-based Ge heteroepitaxy using RPCVD
Author :
Lei Yao ; Renrong Liang ; Chunsheng Jiang ; Jing Wang ; Jun Xu
Author_Institution :
Tsinghua Nat. Lab. for Inf. Sci. & Technol., Tsinghua Univ., Beijing, China
Abstract :
It is demonstrated that Ge epilayers with high quantity, low defect density and smooth surface were achieved using cycle method. In addition, the epitaxy of GaAs on the Ge epilayer/Si substrate is also prepared.
Keywords :
elemental semiconductors; germanium; plasma CVD; semiconductor epitaxial layers; semiconductor growth; silicon; Ge; Ge epilayers; Ge-Si; RPCVD; Si; Si-based Ge beteroepitaxy; cycle method; high quantity; low defect density; smooth surface;
Conference_Titel :
Silicon-Germanium Technology and Device Meeting (ISTDM), 2014 7th International
Conference_Location :
Singapore
Print_ISBN :
978-1-4799-5427-8
DOI :
10.1109/ISTDM.2014.6874631
