DocumentCode :
1779183
Title :
Low-temperature Grown Ge1−xSnx layers on a metallic silicide
Author :
Kawano, Makoto ; Yamada, Shigeru ; Miyao, Masanobu ; Hamaya, Kohei
Author_Institution :
Dept. of Electron., Kyushu Univ., Fukuoka, Japan
fYear :
2014
fDate :
2-4 June 2014
Firstpage :
63
Lastpage :
64
Abstract :
We have demonstrated epitaxial growth of Ge1-xSnx layers on Fe3Si by low-temperature MBE. We believe that this technique can be applicable to the growth of Ge1-xSnx on various ferromagnetic metallic templates toward high-performance spin-based MOSFETs.
Keywords :
ferromagnetic materials; germanium alloys; iron compounds; metallic epitaxial layers; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; tin alloys; Fe3Si; Ge1-xSnx; epitaxial growth; ferromagnetic metallic templates; high-performance spin-based MOSFET; low-temperature MBE; low-temperature grown Ge1-xSnx layers; metallic silicide; Atomic beams; Atomic layer deposition; MOSFET; Molecular beam epitaxial growth; Silicon; Tin;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Silicon-Germanium Technology and Device Meeting (ISTDM), 2014 7th International
Conference_Location :
Singapore
Print_ISBN :
978-1-4799-5427-8
Type :
conf
DOI :
10.1109/ISTDM.2014.6874632
Filename :
6874632
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1779183
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