DocumentCode :
1779194
Title :
Arsenic atomic layer doping in Si using AsH3
Author :
Yamamoto, Yusaku ; Kurps, R. ; Murota, Junichi ; Tillack, Bernd
Author_Institution :
IHP, Frankfurt (Oder), Germany
fYear :
2014
fDate :
2-4 June 2014
Firstpage :
33
Lastpage :
34
Abstract :
Results of arsenic atomic layer doping in Si (100) are presented in this study. Arsenic adsorption and segregation behavior on the Si(100) surface are also discussed. SIMS and four-point probe methods are used for As profile and dosage measurements.
Keywords :
adsorption; arsenic; doping profiles; elemental semiconductors; secondary ion mass spectra; semiconductor doping; silicon; surface segregation; SIMS; Si(100) surface; Si:As; adsorption; arsenic atomic layer doping; arsenic dosage measurement; arsenic profile measurement; four-point probe; segregation; Adsorption; Ash; Atomic layer deposition; Doping; Process control; Silicon; Surface treatment;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Silicon-Germanium Technology and Device Meeting (ISTDM), 2014 7th International
Conference_Location :
Singapore
Print_ISBN :
978-1-4799-5427-8
Type :
conf
DOI :
10.1109/ISTDM.2014.6874638
Filename :
6874638
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1779194
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