Title :
Analytical model for impact ionization in 3D multiplication regions
Author :
El-Howayek, G. ; Milner, B.M. ; Senanayake, P. ; Huffaker, D.L. ; Hayat, M.M.
Author_Institution :
Comput. Eng. Dept., Univ. of New Mexico, Albuquerque, NM, USA
Abstract :
An analytical model for avalanche process in 3D multiplication regions is presented. Nanowires are distinguished by this phenomenon due their flexibility in forming axial and radial junctions.
Keywords :
impact ionisation; nanowires; 3D multiplication regions; avalanche process; impact ionization; nanowires; Analytical models; Educational institutions; Gallium arsenide; Noise; Three-dimensional displays; Trajectory; Voltage measurement;
Conference_Titel :
Photonics Conference (IPC), 2014 IEEE
Conference_Location :
San Diego, CA
DOI :
10.1109/IPCon.2014.6995301
