Title :
Optimization of epitaxial growth for thick Ge-on-Si structures used for single photon avalanche diode applications
Author :
Allred, P.S. ; Myronov, M. ; Rhead, S.D. ; Warburton, R. ; Intermite, G. ; Buller, G. ; Leadley, D.R.
Author_Institution :
Dept. of Phys., Univ. of Warwick, Coventry, UK
Abstract :
SPAD structures have been grown by RP-CVD and shown to have: excellent crystallinity, with low TDD; a smooth surface, suitable for device incorporation; and sharp doping profiles required to maximize performance. Device measurements have produced the highest SPDE of any Ge on Si SPAD recorded.
Keywords :
avalanche photodiodes; chemical vapour deposition; elemental semiconductors; germanium; semiconductor epitaxial layers; semiconductor growth; silicon; vapour phase epitaxial growth; Ge-Si; RP-CVD; crystallinity; device incorporation; doping profiles; epitaxial growth; optimization; single photon avalanche diode applications; smooth surface; thick Ge-on-Si structures; threading dislocation density; Decision support systems;
Conference_Titel :
Silicon-Germanium Technology and Device Meeting (ISTDM), 2014 7th International
Conference_Location :
Singapore
Print_ISBN :
978-1-4799-5427-8
DOI :
10.1109/ISTDM.2014.6874639
