Title :
Low breakdown voltage CMOS compatible p-n junction avalanche photodiode
Author :
Hossain, M. Mottaleb ; Zarkesh-Ha, Payman ; David, John P. R. ; Hayat, Majeed M.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of New Mexico, Albuquerque, NM, USA
Abstract :
Breakdown voltage, mean gain and excess noise factor of CMOS-compatible p-n junction silicon avalanche photodiodes are predicted using the dead space multiplication theory. Measured dark current and breakdown voltages are also reported supporting low-voltage operation.
Keywords :
CMOS integrated circuits; avalanche photodiodes; dark conductivity; low-power electronics; p-n junctions; semiconductor device breakdown; CMOS compatible p-n junction avalanche photodiode; Si; breakdown voltage; dark current; dead space multiplication theory; excess noise; low-voltage operation; mean gain; Avalanche photodiodes; CMOS integrated circuits; Dark current; Doping; Electric breakdown; Noise; Silicon; CMOS; avalanche photodiodes; breakdown; dead space; silicon; smart lighting;
Conference_Titel :
Photonics Conference (IPC), 2014 IEEE
Conference_Location :
San Diego, CA
DOI :
10.1109/IPCon.2014.6995302
