Title :
Weak anti-localization behavior of high mobility 2D hole gas in a strained Ge QW heterostructure
Author :
Foronda, J. ; Morrison, Cherrelle ; Myronov, M. ; Halpin, J.E. ; Rhead, S.D. ; Leadley, D.R.
Author_Institution :
Dept. of Phys., Univ. of Warwick, Coventry, UK
Abstract :
We have measured the low temperature and low field MR of a high mobility Ge 2DHG. The resulting MR curves demonstrate WL-like behavior at temperatures below 2K with WAL-like behavior appearing between 3K and 12K. Evidence of WAL has not been previously observed in Ge. We believe this transition to be the result of a summation of WL and WAL effects in the main conduction channel and parallel conduction channel(s).This is a promising result for Ge as a possible channel for future spin-FETs.
Keywords :
electrical conductivity; elemental semiconductors; germanium; magnetoresistance; semiconductor heterojunctions; semiconductor quantum wells; two-dimensional hole gas; Ge; high mobility 2D hole gas; low field MR; low temperature MR; magnetoresistance; parallel conduction channel; spin-FET; strained Ge QW heterostructure; weak antilocalization behavior; Decision support systems;
Conference_Titel :
Silicon-Germanium Technology and Device Meeting (ISTDM), 2014 7th International
Conference_Location :
Singapore
Print_ISBN :
978-1-4799-5427-8
DOI :
10.1109/ISTDM.2014.6874644
