Growth and interface engineering of highly strained low bandgap group IV semiconductors

Author

Wirths, Stephan ; Pampillon, M.A. ; San Andres, E. ; Stange, Daniela ; Tiedemann, Andreas T. ; Mussler, Gregor ; Fox, A. ; Breuer, U. ; Hartmann, J.-M. ; Mantl, Siegfried ; Buca, Dan

Author_Institution

Peter Grunberg Inst. (PGI9) & JARA-FIT, Forschungszentrum Juelich, Grunberg, Germany

fYear

2014

fDate

2-4 June 2014

Firstpage

13

Lastpage

14

Abstract

Highly tensile strained Ge(Sn) layers epitaxially grown on GeSn strain relaxed buffer layer have been presented. Electrical characterization exhibits good interfacial quality of the high-k gate stacks employing HfO₂ on Ge and strained Ge. These results mark a first step towards electronic device integration of low bandgap highly tensely strained group IV semiconductors.

Keywords

Brillouin zones; CMOS integrated circuits; MOS capacitors; buffer layers; chemical vapour deposition; elemental semiconductors; germanium; germanium compounds; hafnium compounds; high-k dielectric thin films; narrow band gap semiconductors; passivation; semiconductor epitaxial layers; semiconductor growth; semiconductor-insulator boundaries; Brillouin zone; CMOS process; Ge; GeSn-Ge; HfO₂-Ge; MOS-capacitors; electronic band structure calculations; electronic device integration; epitaxial growth; high-k gate stacks; highly tensile strained layers; interfacial quality; low bandgap highly tensely strained group IV semiconductors; strain induced bandgap narrowing; strain relaxed buffer layer; surface passivation; Aluminum oxide; Buffer layers; Hafnium compounds; Logic gates; Photonic band gap; Strain; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon-Germanium Technology and Device Meeting (ISTDM), 2014 7th International

Conference_Location

Singapore

Print_ISBN

978-1-4799-5427-8

Type

conf

DOI

10.1109/ISTDM.2014.6874645

Filename

6874645