Title :
Growth and interface engineering of highly strained low bandgap group IV semiconductors
Author :
Wirths, Stephan ; Pampillon, M.A. ; San Andres, E. ; Stange, Daniela ; Tiedemann, Andreas T. ; Mussler, Gregor ; Fox, A. ; Breuer, U. ; Hartmann, J.-M. ; Mantl, Siegfried ; Buca, Dan
Author_Institution :
Peter Grunberg Inst. (PGI9) & JARA-FIT, Forschungszentrum Juelich, Grunberg, Germany
Abstract :
Highly tensile strained Ge(Sn) layers epitaxially grown on GeSn strain relaxed buffer layer have been presented. Electrical characterization exhibits good interfacial quality of the high-k gate stacks employing HfO2 on Ge and strained Ge. These results mark a first step towards electronic device integration of low bandgap highly tensely strained group IV semiconductors.
Keywords :
Brillouin zones; CMOS integrated circuits; MOS capacitors; buffer layers; chemical vapour deposition; elemental semiconductors; germanium; germanium compounds; hafnium compounds; high-k dielectric thin films; narrow band gap semiconductors; passivation; semiconductor epitaxial layers; semiconductor growth; semiconductor-insulator boundaries; Brillouin zone; CMOS process; Ge; GeSn-Ge; HfO2-Ge; MOS-capacitors; electronic band structure calculations; electronic device integration; epitaxial growth; high-k gate stacks; highly tensile strained layers; interfacial quality; low bandgap highly tensely strained group IV semiconductors; strain induced bandgap narrowing; strain relaxed buffer layer; surface passivation; Aluminum oxide; Buffer layers; Hafnium compounds; Logic gates; Photonic band gap; Strain; Temperature measurement;
Conference_Titel :
Silicon-Germanium Technology and Device Meeting (ISTDM), 2014 7th International
Conference_Location :
Singapore
Print_ISBN :
978-1-4799-5427-8
DOI :
10.1109/ISTDM.2014.6874645
