Title :
Impact of stressors in future SiGe-based FinFETs: Mobility boost and scalability
Author :
Eneman, Geert ; Brunco, D.P. ; Witters, L. ; Mitard, J. ; Hikavyy, Andriy ; De Keersgieter, An ; Roussel, P.J. ; Loo, Roger ; Veloso, A. ; Horiguchi, Naoto ; Collaert, Nadine ; Thean, A.
Author_Institution :
Imec, Heverlee, Belgium
Abstract :
S/D epitaxial layers and SRBs are the most effective stressors in scaled FinFETs. While S/D stressors are well established, for SRBs the remaining technical difficulties are significant. However, its expected performance boost and enhanced scalability makes developing SRBs worthwhile, especially when combined with alternative channel materials.
Keywords :
Ge-Si alloys; MOSFET; semiconductor materials; S-D epitaxial layers; SiGe; channel material; mobility boost; scalability enhancement; silicon-germanium-based FinFET; stressor impact; FinFETs; Logic gates; Silicon; Silicon germanium; Stress; Substrates; Tin;
Conference_Titel :
Silicon-Germanium Technology and Device Meeting (ISTDM), 2014 7th International
Conference_Location :
Singapore
Print_ISBN :
978-1-4799-5427-8
DOI :
10.1109/ISTDM.2014.6874646
