Title :
Vertical Ge heterojunction gate-ail-around Tunneling Field Effect Transistors with Ge0.92Sn0.08-δ-Layers at the tunneling junction
Author :
Schulze, J. ; Blech, Andreas ; Fischer, Inga Anita ; Hahnel, Daniel ; Naasz, Sandra ; Tropper, Eva-Maria
Author_Institution :
Inst. fur Halbleitertech., Univ. Stuttgart, Stuttgart, Germany
Abstract :
We presented first results on the fabrication and characterization of vertical Ge heterojunction GAA-TFETs with a Ge0.92Sn0.08-δ-layer at the tunneling junction with transistor body diameters from 10 μm down to 250 nm (pillar geometry).
Keywords :
field effect transistors; germanium compounds; tunnel transistors; Ge0.92Sn0.08; heterojunction gate-ail-around tunneling field effect transistors; pillar geometry; transistor body diameters; tunneling junction; vertical GAA-TFET; Electronic mail;
Conference_Titel :
Silicon-Germanium Technology and Device Meeting (ISTDM), 2014 7th International
Conference_Location :
Singapore
Print_ISBN :
978-1-4799-5427-8
DOI :
10.1109/ISTDM.2014.6874652
