Title :
RP-CVD growth of high carbon content Si1−xCx epilayers using disilane and trimethylsilane precursors
Author :
Myronov, M. ; Rhead, S.D. ; Colston, G. ; Leadley, D.R.
Author_Institution :
Dept. of Phys., Univ. of Warwick, Coventry, UK
Abstract :
We have demonstrated Si1-xCx epilayers growth by RP-CVD and using Disilane and Trimethylsilane precursors. Very high Carbon content, up to 2.4%, has been obtained. It is close to the best results obtained using more expensive precursors. Use of the RP-CVD is vital from an industrial standpoint as, although MBE offers greater control over growth parameters, the RP-CVD is one of the only viable methods of mass epitaxial growth.
Keywords :
chemical vapour deposition; organic compounds; semiconductor epitaxial layers; semiconductor growth; silicon compounds; wide band gap semiconductors; MBE; RP-CVD growth; Si1-xCx; disilane precursors; high carbon content Si1-xCx epilayers; thylsilane precursors; Carbon; Epitaxial growth; Lattices; Photonic band gap; Physics; Silicon; Substrates;
Conference_Titel :
Silicon-Germanium Technology and Device Meeting (ISTDM), 2014 7th International
Conference_Location :
Singapore
Print_ISBN :
978-1-4799-5427-8
DOI :
10.1109/ISTDM.2014.6874653
