Title :
Growth of indium arsenide on silicon-based substrates using molecular beam epitaxy
Author :
Klan Hua Tan ; Wan Khai Loke ; Wicaksono, Satrio ; Soon Fatt Yoon ; Subramanian, Sivaraman ; Qian Zhou ; Yee-Chia Yeo
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
Abstract :
Low defect InAs layers have been successfully grown on a GeOI substrate for the first time. The epitaxial structure grown allows the co-existence Si, Ge and InAs material on a single wafer. TEM and AFM results showed a low defect density and smooth InAs surface, respectively.
Keywords :
III-V semiconductors; atomic force microscopy; indium compounds; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; transmission electron microscopy; AFM; Ge; GeOI substrate; InAs; Si; TEM; epitaxial structure; low defect InAs layers; low defect density; molecular beam epitaxy; silicon-based substrates; smooth surface; Atomic beams; Atomic layer deposition; Epitaxial growth; Epitaxial layers; Periodic structures; Silicon; Substrates;
Conference_Titel :
Silicon-Germanium Technology and Device Meeting (ISTDM), 2014 7th International
Conference_Location :
Singapore
Print_ISBN :
978-1-4799-5427-8
DOI :
10.1109/ISTDM.2014.6874657
