Title :
Observation of in situ B-doped Epitaxial Ge layer growth on Si(111) by ultra-high vacuum chemical vapor deposition
Author :
Byongju Kim ; Hyunchul Jang ; Dae-Seop Byeon ; Sangmo Koo ; Dae-Hong Ko
Author_Institution :
Dept. of Mater. Sci. & Eng., Yonsei Univ., Seoul, South Korea
Abstract :
In situ B-doped epitaxial Ge layers were grown on a Si(111) substrate using UHV CVD for the application to S/D regions of pMOS devices. The Ge surface evolution with the deposition time, showing (111) terrace structures, were influenced by the B2H6 flow rate.
Keywords :
MIS devices; boron; chemical vapour deposition; elemental semiconductors; germanium; semiconductor epitaxial layers; semiconductor growth; surface morphology; (111) terrace structures; Ge:B-Si; Si; Si(111) substrate; in situ boron-doped epitaxial germanium layer growth; metal oxide semiconductor devices; pMOS devices; surface morphology evolution; ultrahigh vacuum chemical vapor deposition; Epitaxial growth; Scanning electron microscopy; Silicon; Substrates; Surface morphology; Surface treatment;
Conference_Titel :
Silicon-Germanium Technology and Device Meeting (ISTDM), 2014 7th International
Conference_Location :
Singapore
Print_ISBN :
978-1-4799-5427-8
DOI :
10.1109/ISTDM.2014.6874662
