DocumentCode :
1779239
Title :
High mobility germanium-tin (Ge0.930Sn0.070) P-MOSFETs with surface passivation by silicon atomic layer epitaxy
Author :
Dian Lei ; Chunlei Zhan ; Wei Wang ; Xiao Gong ; Qian Zhou ; Eng-Soon Tok ; Yee-Chia Yeo
Author_Institution :
Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore, Singapore
fYear :
2014
fDate :
2-4 June 2014
Firstpage :
147
Lastpage :
148
Abstract :
High quality Ge0.930Sn0.070 (100) film was epitaxially grown on Ge (100) substrate. A new passivation process is demonstrated and integrated in GeSn p-MOSFETs. Ge0.930Sn0.070 p-MOSFETs with the new low temperature Si2H6 passivation process achieved a high effective hole mobility of 500 cm-2/V·s at Ninv of 7×1012 cm-.
Keywords :
MOSFET; atomic layer epitaxial growth; carrier mobility; germanium compounds; passivation; silicon compounds; thin film transistors; Ge; Ge (100) substrate; Ge0.930Sn0.070-Si2H6; high mobility germanium-tin p-MOSFET; high quality (100) film; hole mobility; silicon atomic layer epitaxy; surface passivation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Silicon-Germanium Technology and Device Meeting (ISTDM), 2014 7th International
Conference_Location :
Singapore
Print_ISBN :
978-1-4799-5427-8
Type :
conf
DOI :
10.1109/ISTDM.2014.6874663
Filename :
6874663
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1779239
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