• DocumentCode
    1779239
  • Title

    High mobility germanium-tin (Ge0.930Sn0.070) P-MOSFETs with surface passivation by silicon atomic layer epitaxy

  • Author

    Dian Lei ; Chunlei Zhan ; Wei Wang ; Xiao Gong ; Qian Zhou ; Eng-Soon Tok ; Yee-Chia Yeo

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore, Singapore
  • fYear
    2014
  • fDate
    2-4 June 2014
  • Firstpage
    147
  • Lastpage
    148
  • Abstract
    High quality Ge0.930Sn0.070 (100) film was epitaxially grown on Ge (100) substrate. A new passivation process is demonstrated and integrated in GeSn p-MOSFETs. Ge0.930Sn0.070 p-MOSFETs with the new low temperature Si2H6 passivation process achieved a high effective hole mobility of 500 cm-2/V·s at Ninv of 7×1012 cm-.
  • Keywords
    MOSFET; atomic layer epitaxial growth; carrier mobility; germanium compounds; passivation; silicon compounds; thin film transistors; Ge; Ge (100) substrate; Ge0.930Sn0.070-Si2H6; high mobility germanium-tin p-MOSFET; high quality (100) film; hole mobility; silicon atomic layer epitaxy; surface passivation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Silicon-Germanium Technology and Device Meeting (ISTDM), 2014 7th International
  • Conference_Location
    Singapore
  • Print_ISBN
    978-1-4799-5427-8
  • Type

    conf

  • DOI
    10.1109/ISTDM.2014.6874663
  • Filename
    6874663
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1779239