DocumentCode :
1779242
Title :
Formation of vertically stacked germanium-tin (Ge1−xSnx) nanowires using a selective dry etch technique
Author :
Xin Xu ; Dian Lei ; Wei Wang ; Yuan Dong ; Xiao Gong ; Yee-Chia Yeo
Author_Institution :
Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore, Singapore
fYear :
2014
fDate :
2-4 June 2014
Firstpage :
167
Lastpage :
168
Abstract :
Vertically stacked (×3 wires stacked) Ge0.92Sn0.08 NWs were realized for the first time. This structure could be used for the fabrication of high performance Ge1-xSnx GAA NW MOSFETs.
Keywords :
CMOS integrated circuits; MOSFET; elemental semiconductors; etching; germanium; germanium compounds; nanofabrication; nanowires; semiconductor growth; CMOS compatible top-down approach; Ge-Ge1-xSnx; GeOI substrate; gate-all-around nanowire MOSFET; selective dry etch technique; vertically stacked germanium-tin nanowires; Decision support systems; Erbium; High definition video;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Silicon-Germanium Technology and Device Meeting (ISTDM), 2014 7th International
Conference_Location :
Singapore
Print_ISBN :
978-1-4799-5427-8
Type :
conf
DOI :
10.1109/ISTDM.2014.6874664
Filename :
6874664
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1779242
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