Title :
Germanium-lead alloy with 0.3% substitutional lead formed by pulsed laser induced epitaxy
Author :
Qian Zhou ; Chunlei Zhan ; Xiao Gong ; Taw Kuei Chan ; Osipowicz, Thomas ; Sin Leng Lim ; Eng Soon Tok ; Yee-Chia Yeo
Author_Institution :
Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore, Singapore
Abstract :
For the first time, single crystalline GePb was formed using sputtering and laser induced epitaxy. The GePb alloy shows a good crystalline quality without Pb precipitation or clustering. No dislocation is observed at the interface between GePb and Ge. HRBS data indicates that substitutional Pb content of ~0.3% was obtained.
Keywords :
Rutherford backscattering; germanium alloys; lead alloys; metallic epitaxial layers; pulsed laser deposition; sputter deposition; GeSb; HRBS; germanium-lead alloy; high-resolution Rutherford backscattering spectrometry; pulsed laser induced epitaxy; sputtering; Decision support systems;
Conference_Titel :
Silicon-Germanium Technology and Device Meeting (ISTDM), 2014 7th International
Conference_Location :
Singapore
Print_ISBN :
978-1-4799-5427-8
DOI :
10.1109/ISTDM.2014.6874665
