DocumentCode :
1779250
Title :
Thermal stability of highly compressive strained germanium-tin (GeSn) grown by molecular beam epitaxy
Author :
Wei Wang ; Qian Zhou ; Jisheng Pan ; Zheng Zhang ; Eng Soon Tok ; Yee-Chia Yeo
Author_Institution :
Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore, Singapore
fYear :
2014
fDate :
2-4 June 2014
Firstpage :
157
Lastpage :
158
Abstract :
Highly strained Ge1-xSnx films were epitaxially grown on Ge(001), with x up to 0.17. Good crystalline quality and a relatively flat surface were obtained. Critical temperatures exist for Sn segregation for various x. XPS shows that the Sn surface segregation could occur at temperatures as low as 400 °C for Ge0.932Sn0.068.
Keywords :
X-ray photoelectron spectra; germanium alloys; metallic epitaxial layers; molecular beam epitaxial growth; surface segregation; thermal stability; tin alloys; Ge; Ge1-xSnx; XPS; critical temperature; crystalline quality; highly compressive strained germanium-tin films; molecular beam epitaxy; surface segregation; temperature 400 degC; thermal stability; Annealing; Molecular beam epitaxial growth; Rough surfaces; Surface roughness; Three-dimensional displays; Tin;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Silicon-Germanium Technology and Device Meeting (ISTDM), 2014 7th International
Conference_Location :
Singapore
Print_ISBN :
978-1-4799-5427-8
Type :
conf
DOI :
10.1109/ISTDM.2014.6874668
Filename :
6874668
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1779250
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