DocumentCode :
1779259
Title :
Strain-induced morphological instability and self assembly of tin wires during controlled annealing of Ge0.83Sn0.17 epitaxial film on Ge(001) substrate
Author :
Lingzi Li ; Wei Wang ; Eng Soon Tok ; Yee-Chia Yeo
Author_Institution :
Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore, Singapore
fYear :
2014
fDate :
2-4 June 2014
Firstpage :
45
Lastpage :
46
Abstract :
Formation of Sn wires on Ge0.83Sn0.17 layer during annealing was discovered. The phenomenon observed may be explained by surface undulation, Sn segregation and aggregation.
Keywords :
aggregation; annealing; germanium alloys; molecular beam epitaxial growth; self-assembly; semiconductor epitaxial layers; semiconductor growth; semiconductor materials; surface morphology; surface segregation; tin alloys; Ge; Ge(001) Substrate; Ge0.83Sn0.17; aggregation; annealing; epitaxial film; self-assembly; strain-induced morphological instability; surface segregation; surface undulation; tin wires; Decision support systems;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Silicon-Germanium Technology and Device Meeting (ISTDM), 2014 7th International
Conference_Location :
Singapore
Print_ISBN :
978-1-4799-5427-8
Type :
conf
DOI :
10.1109/ISTDM.2014.6874671
Filename :
6874671
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1779259
بازگشت